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Creators/Authors contains: "Kaess, Felix"

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  1. ; ; ; ; ; ; ; (, Semiconductor Science and Technology)
    Abstract Process chemical potential control and dislocation reduction were implemented to control oxygen concentration in N-polar GaN layers grown on sapphire substrates via metal organic chemical vapor deposition (MOCVD). As process supersaturation was changed from ∼30 to 3400, the formation energy of the oxygen point defect increased, which resulted in a 25-fold decrease in oxygen incorporation. Reducing dislocations by approximately a factor of 4 (to ∼10 9 cm −3 ) allowed for further reduction of oxygen incorporation to the low-10 17 cm −3 range. Smooth N-polar GaN layers with low oxygen content were achieved by a two-step process, whereas first a 1 µ m thick smooth N-polar layer with high oxygen concentration was grown, followed by low oxygen concentration layer grown at high supersaturation. 
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  2. ; ; ; ; ; ; ; ; ; ; et al (, 2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID))
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  3. ; ; ; ; ; ; ; ; ; ; et al (, Journal of Vacuum Science & Technology A)
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  4. ; ; ; ; ; ; ; ; ; (, ECS Transactions)
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  5. ; ; ; ; ; ; (, Journal of Applied Physics)
  6. ; ; ; ; ; ; (, Journal of Applied Physics)